Magnetic properties of YIG (Y_3Fe_5O_(12)) thin films prepared by the post annealing of amorphous films deposited by rf-magnetron sputtering

摘要

We report magnetic properties of Y_3Fe_5O_(12) (YIG) films on thermally oxidized Si (100) and (Gd_3Ga_5O_(12)) GGG (111) substrates. Amorphous YIG films with the cation ratio Y:Fe=3.04:4.96, deposited by rf-magnetron sputtering at room temperature in pure argon atmosphere, were crystallized by postannealing (600-900℃) of amorphous films in air and in 500 ppm oxygen. While postannealed YIG films on GGG substrates were well textured, those on Si (100) were randomly oriented. High-quality YIG films could be better obtained in the reduced (500 ppm O_2) oxygen atmosphere than air since more effective YIG growth during annealing process and lower FMR linewidth (ΔH) of films could be achieved.