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Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications

机译:用于GaN LED应用的Sn掺杂ZnO / Ag / Sn掺杂ZnO透明接触层的溅射沉积

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摘要

Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multilayers prepared using sputtering process was employed in GaN-based blue light-emitting diodes(LEDs) as transparent contact layers (TCLs). The ZAZ layer had better optical and electrical properties without any thermal annealing. The ZAZ TCLs improved the current spreading on p-GaN layer and increased the light output power in the large area devices. The efficiency droop was also quite small in the case of adopting a ZAZ TCL in GaN-based LEDs. These results are promising for the development of a ZAZ TCL using sputtering process for GaN LED applications. (C) 2016 Elsevier B.V. All rights reserved.
机译:在基于GaN的蓝色发光二极管(LED)中,采用溅射工艺制备的Sn掺杂ZnO / Ag / Sn掺杂ZnO(ZAZ)多层膜作为透明接触层(TCL)。 ZAZ层具有更好的光学和电学性质,无需任何热退火。 ZAZ TCL改善了在p-GaN层上的电流扩散并增加了大面积器件中的光输出功率。在基于GaN的LED中采用ZAZ TCL的情况下,效率下降也非常小。这些结果对于使用溅射工艺开发用于GaN LED应用的ZAZ TCL很有希望。 (C)2016 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2016年第1期|72-76|共5页
  • 作者单位

    Elect & Telecommun Res Inst, Mat & Components Lab, Daejeon 34129, South Korea|Univ Sci & Technol, Dept Adv Device Technol, Daejeon 34113, South Korea;

    Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 54896, Chonbuk, South Korea;

    Elect & Telecommun Res Inst, Mat & Components Lab, Daejeon 34129, South Korea|Univ Sci & Technol, Dept Adv Device Technol, Daejeon 34113, South Korea;

    Elect & Telecommun Res Inst, Mat & Components Lab, Daejeon 34129, South Korea|Univ Sci & Technol, Dept Adv Device Technol, Daejeon 34113, South Korea;

    Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 54896, Chonbuk, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN; Transparent contact layer; LED;

    机译:GaN;透明接触层;LED;

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