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Band-gap tuning of lead halide perovskite using a single step spin-coating deposition process

机译:使用一步旋涂沉积工艺对卤化钙钛矿进行带隙调整

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In this paper, we present a study of the structural and optical properties of organic-inorganic halide-based perovskite semiconductors with band gaps varying from NIR to visible at room temperature. Thin films of nanocrystalline CH3NH3PbI3 with different concentrations of methylammonium iodide (MAI) have been successfully deposited onto glass substrates using single step spin-coating technique. The prepared films have been characterized by X-ray diffraction, optical absorption spectroscopy and photoluminescence measurements. X-ray diffraction scans revealed that even for stoichiometric atomic cOncentrations of MA:Pb:I of 1:1:3, the PbI2 phase was also present. The PbI2 phase showed a highly textured along the (001) direction in all the prepared films, with a crystallite size in the range of approximately 30-40 nm. The optical absorbance edge of CH3NH3PbI3 thin films is described in terms of direct transition model proposed by Tauc in the strong absorption region. The band gap of the pure PbI2 film was calculated to be 2.40 eV, whereas the band gap of the pervoskite film with stoichiometric ionic ratio of 1:1 PhI2 and CH3NH3I was calculated to be 1.46 eV, while absorption coefficient is similar to 10(5) cm(-1). Photoluminescence measurements showed a red shift in the perovskite emission with increasing the MAI concentration, confirming the correct placement of the MA ions in the perovskite crystalline structure showing the PbI2 octahedra. Our results confirm the existence of PbI2 phase in the highly efficient perovskite solar cells, as demonstrated in the recent publication. (C) 2015 Elsevier B.V. All rights reserved.
机译:在本文中,我们提出了对有机-无机卤化物基钙钛矿半导体的结构和光学性质的研究,其带隙在室温下从NIR到可见光不等。使用一步旋涂技术已将具有不同浓度的甲基碘化碘(MAI)的纳米晶CH3NH3PbI3薄膜成功沉积在玻璃基板上。通过X射线衍射,光学吸收光谱和光致发光测量来表征所制备的膜。 X射线衍射扫描表明,即使对于MA:Pb:I的化学计量原子浓度为1:1:3,也存在PbI2相。在所有制备的薄膜中,PbI2相均沿(001)方向显示高度织构,微晶尺寸约为30-40 nm。根据Tauc提出的在强吸收区域的直接跃迁模型,描述了CH3NH3PbI3薄膜的光吸收边缘。纯PbI2膜的带隙经计算为2.40 eV,而化学计量离子比为1:1 PhI2和CH3NH3I的钙钛矿膜的带隙经计算为1.46 eV,而吸收系数约为10(5 )cm(-1)。光致发光测量结果显示,随着MAI浓度的增加,钙钛矿的发射发生红移,从而确认了MA离子在显示PbI2八面体的钙钛矿晶体结构中的正确位置。我们的结果证实了高效钙钛矿太阳能电池中PbI2相的存在,正如最近的出版物所证明的那样。 (C)2015 Elsevier B.V.保留所有权利。

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