首页> 外文期刊>Materials Letters >Suppression of Cu3Sn layer and formation of multi-orientation IMCs during thermal aging in Cu/Sn-3.5Ag/Cu-15Zn transient liquid-phase bonding in novel 3D-IC Technologies
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Suppression of Cu3Sn layer and formation of multi-orientation IMCs during thermal aging in Cu/Sn-3.5Ag/Cu-15Zn transient liquid-phase bonding in novel 3D-IC Technologies

机译:新型3D-IC技术中Cu / Sn-3.5Ag / Cu-15Zn瞬态液相键合中热老化过程中Cu3Sn层的抑制和多取向IMC的形成

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摘要

The evolution of grain structures and microstructures in Cu/Sn-3.5Ag/Cu xZn (x=0 or 15 wt%) TLP bonding before and after aging were investigated. Cu Sn intermetallic compounds (IMCs) with a strong [001] orientation rapidly form from the Cu pads and cause impingement in TLP bond, allowing cracks to easily propagate. During aging, the Cu6Sn5 becomes one layer with a homogeneous structure, thick Cu3Sn layers form, and Kirkendall voids occur at bonding interfaces, causing degradation of bonding strength. This study demonstrates that doping Zn into one of the Cu substrates efficiently retains the multi-orientation structure of Cu-Sn IMCs and suppresses the formation of Cu3Sn during lone-time aging. The Cu/Sn-3.5Ag/Cu-15Zn TLP bonding is potentially useful in strengthening the interconnections for novel 3D-IC technologies.
机译:研究了时效前后Cu / Sn-3.5Ag / Cu xZn(x = 0或15 wt%)TLP结合过程中晶粒结构和微观结构的演变。具有强烈[001]取向的Cu Sn金属间化合物(IMC)从Cu焊盘快速形成,并引起TLP键的撞击,从而使裂纹易于传播。在时效过程中,Cu6Sn5变成一层具有均匀结构的层,形成厚的Cu3Sn层,并且在键合界面处出现Kirkendall空隙,导致键合强度降低。这项研究表明,将Zn掺杂到其中一个Cu衬底中可以有效地保留Cu-Sn IMC的多取向结构,并抑制单独时效过程中Cu3Sn的形成。 Cu / Sn-3.5Ag / Cu-15Zn TLP键合可用于增强新型3D-IC技术的互连。

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