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Fabrication and photoelectrochemical property of In2O3/ZnO composite nanotube arrays using ZnO nanorods as self-sacrificing templates

机译:以ZnO纳米棒为自牺牲模板的In2O3 / ZnO复合纳米管阵列的制备及光电化学性能

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摘要

In2O3/ZnO composite nanotube arrays were prepared on FTO substrate via a novel immersion-calcination method using ZnO nanorods as self-sacrificing templates. The composition and morphology of the In2O3/ZnO samples could be tuned by changing the immersion time of ZnO nanorod arrays in a 0.50 M In(NO3)(3) solution. The photoelectrochemical activity of the prepared samples was studied and the optimized In2O3/ZnO electrode exhibited the highest anodic photocurrent of 0.36 mA cm(-2), which is 3.5 times of that of pure ZnO electrode under visible light illumination. The improved photoelectrochemical performance is ascribed not only to the synergy effect at the interface of In2O3 and ZnO, but also to the enhanced electron transfer along the one dimensional In2O3/ZnO nanotube arrays. (C) 2017 Elsevier B.V. All rights reserved.
机译:采用新颖的浸没-煅烧方法,以ZnO纳米棒为自牺牲模板,在FTO衬底上制备了In2O3 / ZnO复合纳米管阵列。可以通过改变ZnO纳米棒阵列在0.50 M In(NO3)(3)溶液中的浸没时间来调整In2O3 / ZnO样品的组成和形态。研究了所制备样品的光电化学活性,优化的In2O3 / ZnO电极具有最高的阳极光电流0.36 mA cm(-2),是可见光照射下纯ZnO电极的3.5倍。改善的光电化学性能不仅归因于In2O3和ZnO界面处的协同效应,而且归因于沿一维In2O3 / ZnO纳米管阵列增强的电子转移。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2018年第15期|65-68|共4页
  • 作者

    Su Feng-Yun; Zhang Wei-De;

  • 作者单位

    South China Univ Technol, Sch Chem & Chem Engn, 381 Wushan Rd, Guangzhou 510640, Guangdong, Peoples R China;

    South China Univ Technol, Sch Chem & Chem Engn, 381 Wushan Rd, Guangzhou 510640, Guangdong, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    In2O3; ZnO; Self-sacrificing template; Semiconductors; Nanotube arrays; Photoelectrochemical;

    机译:In2O3;ZnO;自牺牲模板;半导体;纳米管阵列;光电化学;

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