首页> 外文期刊>Journal of Colloid and Interface Science >Fabrication, characterization and photoelectrochemical properties of CdS/CdSe nanofilm co-sensitized ZnO nanorod arrays on Zn foil substrate
【24h】

Fabrication, characterization and photoelectrochemical properties of CdS/CdSe nanofilm co-sensitized ZnO nanorod arrays on Zn foil substrate

机译:Cds / Cdse纳米丝膜共敏化ZnO纳米棒阵列Zn箔基材的制造,表征和光电化学性能

获取原文
获取原文并翻译 | 示例
       

摘要

The photoelectrochemical (PEC) performance of ZnO is restricted by its low light absorption ability and high recombination rate of photogenerated carriers. In order to overcome these drawbacks, ZnO/CdS/CdSe heterostructures are prepared on Zn foil substrate using facile three-step methods containing hydrothermal growth, successive ionic layer adsorption reaction (SILAR) and modified chemical bath deposition (CBD). The effects of process parameters containing the number of SILAR cycles of CdS, sensitization sequence of CdS and CdSe, and precursors of CdSe on PEC performance of ZnO/CdS/CdSe heterostructures, and ZnO NRAs on PEC performance of CdS/CdSe co-sensitizer have been scrutinized. Through CdS and CdSe co-sensitization, a layer of CdS/CdSe nanofilm is conformally deposited on ZnO nanorod arrays (NRAs) observed by transmission electron microscopy (TEM). Both the visible-light absorption ability and separation efficiency of photogenerated carriers of ZnO NRAs are significantly enhanced evidenced by UV-vis diffuse reflectance absorption spectra, photoluminescence (PL) spectra and electrochemical impedance spectra. Due to the synergistic effect of ZnO NRAs and CdS/CdSe cosensitizer, the ZnO/CdS/CdSe heterostructures with five SILAR cycles and one modified CBD cycle (ZnO-CdS5-CdSe) show efficient PEC properties with photocurrent density of 6.244 mA/cm(2) at -0.2 V vs Ag/AgCl under light illumination of 100 mW/cm(2), which are 57.28 and 4.73 times higher than those of pristine ZnO NRAs and CdS/CdSe clusters, respectively. Moreover, the photoconversion efficiency and incident photon to current conversion efficiency (IPCE) of the ZnO-CdS5-CdSe photoanode reach 4.381% and 80.92%, respectively. The heterostructures based on Zn foil substrate in this study can be a promising candidate for practical PEC application and other applications such as photocatalytic degradation and solar cell due to its low manufacturing cost, large-scale production and efficient PEC ability. (C) 2020 Elsevier Inc. All rights reserved.
机译:ZnO的光电化学(PEC)性能受到其低光吸收能力和高光生载流子复合率的限制。为了克服这些缺点,采用水热生长、连续离子层吸附反应(SILAR)和改性化学浴沉积(CBD)三步法在Zn箔衬底上制备了ZnO/CdS/CdSe异质结构。研究了CdS的SiAR循环数、CdS和CdSe的敏化顺序、CdSe的前驱体等工艺参数对ZnO/CdS/CdSe异质结构PEC性能的影响,以及ZnO NRA对CdS/CdSe共敏化剂PEC性能的影响。通过CdS和CdSe共敏化,在ZnO纳米棒阵列(NRA)上共形沉积了一层CdS/CdSe纳米薄膜,透射电子显微镜(TEM)观察到了这一现象。紫外-可见漫反射吸收光谱、光致发光(PL)光谱和电化学阻抗谱表明,ZnO NRA光生载流子的可见光吸收能力和分离效率都显著提高。由于ZnO-NRAs和CdS/CdSe共敏化剂的协同效应,在100 mW/cm(2)的光照下,具有五个硅环和一个改性CBD环(ZnO-CdS5-CdSe)的ZnO/CdS/CdSe异质结构在-0.2 V和Ag/AgCl下表现出高效的PEC特性,其光电流密度分别为6.244 mA/cm(2)和57.28倍,分别地此外,ZnO-CdS5-CdSe光阳极的光转换效率和入射光电流转换效率(IPCE)分别达到4.381%和80.92%。本研究中基于Zn箔衬底的异质结构由于其低制造成本、大规模生产和高效PEC能力,有望成为实际PEC应用以及光催化降解和太阳能电池等其他应用的候选材料。(C) 2020爱思唯尔公司版权所有。

著录项

  • 来源
  • 作者单位

    Shanghai Jiao Tong Univ Sch Elect Informat &

    Elect Engn Dept Micro Nano Elect Natl Key Lab Sci &

    Technol Micro Nano Fabricat Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Elect Informat &

    Elect Engn Dept Micro Nano Elect Natl Key Lab Sci &

    Technol Micro Nano Fabricat Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Elect Informat &

    Elect Engn Dept Micro Nano Elect Natl Key Lab Sci &

    Technol Micro Nano Fabricat Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Elect Informat &

    Elect Engn Dept Micro Nano Elect Natl Key Lab Sci &

    Technol Micro Nano Fabricat Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Elect Informat &

    Elect Engn Dept Micro Nano Elect Natl Key Lab Sci &

    Technol Micro Nano Fabricat Shanghai 200240 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 表面现象的物理化学;胶体化学(分散体系的物理化学);
  • 关键词

    ZnO; CdS; CdSe; Photoelectrochem cal performance; Heterostructures;

    机译:ZnO;CD;CDSE;光电化学性能;异质结构;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号