Enhanced UV-visible photo responsivity of annealed Al/porous silicon (PS): p-Si Schottky device

摘要

Present article reports improvement of UV-visible photo sensing property of porous silicon (PS): p-Si Schottky device by thermal annealing of the electrochemically etched PS: p-Si structure aged for a month. This structure is provided with a rectifying Schottky contact of vacuum coated aluminum (Al) metal. The annealed device at 400 degrees C shows better diode quality and exhibits multi-band UV-visible photo response with maximum photo-to dark current ratio (PDCR) in low applied bias range of-1.8 to 0 V, suggesting low power operation feasibility of the device. For comparison, the results on the device annealed at 200 degrees C are also presented. (c) 2021 Elsevier B.V. All rights reserved.