首页> 外文期刊>Materials Letters >Differential growth and evaluation of band structure of π-SnS for thin-film solar cell applications
【24h】

Differential growth and evaluation of band structure of π-SnS for thin-film solar cell applications

机译:薄膜太阳能电池应用π-SNS带结构的差分生长和评价

获取原文
获取原文并翻译 | 示例
       

摘要

Thin-films and nanomaterials with asymmetrical centers are widely used, and a representative example is pi-SnS. The cubic phase of SnS is a "thermodynamic metastable" polymorph of SnS that has not been investigated extensively. Maintaining the stability of pi-SnS intact and device fabrication are challenging owing to the lack of proper understanding of the nucleation and growth properties. We report a substrate-specific differential growth attribute of pi-SnS based on the chemical deposition route. We evaluated the optical properties and band structure of pi-SnS and achieved an efficiency of similar to 0.12% for a preliminary thin-film solar cell device. (c) 2020 Elsevier B.V. All rights reserved.
机译:广泛使用具有非对称中心的薄膜和纳米材料,并且代表性示例是PI-SNS。 SNS的立方相是尚未广泛研究的SNS的“热力学亚稳态”多晶型物。由于缺乏对成核和生长性质的适当理解,保持PI-SNS完整和器件制造的稳定性是挑战。我们报告了基于化学沉积途径的PI-SNS的底物特异性差异生长属性。我们评估了PI-SNS的光学性质和带结构,并实现了初步薄膜太阳能电池装置的效率至0.12%。 (c)2020 Elsevier B.v.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号