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机译:磁控溅射与硒化退火相结合制备具有导电性和中红外透明性的P型LaSe_2薄膜
Harbin Inst Technol Natl Key Lab Sci & Technol Adv Composites Special 2 Yikuang St Harbin 150001 Heilongjiang Peoples R China;
Harbin Inst Technol Ctr Anal Measurement Harbin 150001 Heilongjiang Peoples R China;
Harbin Inst Technol Natl Key Lab Sci & Technol Adv Composites Special 2 Yikuang St Harbin 150001 Heilongjiang Peoples R China|Minist Educ Key Lab Microsyst & Microstruct Mfg Beijing Peoples R China;
LaSe2 films; Sputtering; Selenized annealing; Mid-infrared; Electrical properties;
机译:磁控溅射与硒化退火相结合制备具有导电性和中红外透明性的P型LaSe_2薄膜
机译:反应大功率脉冲磁控溅射与基于等离子体的离子注入系统相结合的具有电导率的硅掺杂金刚石状碳膜的制备
机译:磁控溅射和真空硒化的WSE2纳米膜的制备与表征
机译:快速热退火对射频磁控溅射P型GaN薄膜和Al / P型GaN肖特基二极管的影响
机译:用于微辐射热计应用的脉冲直流磁控溅射氧化钒薄膜的制备,表征和沉积后修饰
机译:磁控溅射参数和W膜前驱体的应力状态对快速硒化对WSe2层织构的影响
机译:射频磁控溅射掺砷ZnO薄膜中p型导电性形成的综合研究