Controlling the zinc oxide unipolarity through dual acceptor doping for spray-cast homojunction diode

摘要

Dual acceptors, Phosphorous and Nitrogen, were simultaneously doped into zinc oxide crystallite structure for achieving stable p-type conductivity through simple spray pyrolysis technique. Doping concentration was varied from 0 to 1.25 at% in steps of 0.25. The structural, morphological, optical and electronic properties were investigated for phosphorous and nitrogen doped ZnO (NPZO) samples. Furthermore, the optimized p-type film was used for fabricating homojunction with aluminium doped n-type layer (AZO) which was also deposited using spray pyrolysis. The IV characteristics shows the diode behavior of the created homojunction from which the ideality factor was calculated to be 3.16. (C) 2018 Elsevier B.V. All rights reserved.