机译:在4H-SiC衬底上制备p-NiO / n-SiC异质结
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
Department of Electronic Engineering, Xi'an University of Technology, Xian 710048 China;
NiO; SiC; Heterojunction; RF magnetron sputtering;
机译:不同方向的4h-sic衬底上衬底表面处理对Lp Movpe Gan外延的影响
机译:溅射在硅衬底上制备Cu2ZnSnS4薄膜和Cu2ZnSnS4 / Si异质结
机译:使用改良的SiC堆叠方法在轴上4H-SiC(000(1)棒上)基底上制备几层石墨烯
机译:用于外延生长的4°偏离轴4H-SIC基板的表面制备
机译:基于4H-SiC和AlxGA1-XN的紫外检测应用的异质结装置研究
机译:4H-SiC衬底上4H-SiC圆形膜的杨氏模量和残余应力的研究
机译:衬底表面制备对不同取向4H-SiC衬底上LP MOVPE GaN外延的影响