Electrochemical Synthesis of Ni Doped ZnSe Thin Film for Photoelectrochemical Cell Application

摘要

In the present study, Nickel doped Zinc selenide (ZnSe) thin films have been successfully synthesized by a simple potentiostatic mode of electrodeposition for the photoelectrochemical cell. These thin films are characterized for their structural and morphological features using X-ray diffraction studies, scanning electron microscopy techniques. UV-vis spectroscopy has been used for the study of optical properties such as absorbance and transmittance. The photoelectrochemical cell properties were also studied. In the electrodeposition potentiostatic mode is good technique applicable for controlling the film thickness. Hence, this potentiostatically electro-synthesized Ni doped ZnSe thin films could be used as a buffer layer in the photoelectrochemical solar cell.