机译:氧空位和局部自旋对Ni掺杂In_2O_3粉体铁磁性能的影响
School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China,School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China;
School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;
School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;
School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;
annealing; diluted magnetic semiconductor; Ni-doped In_2O_3;
机译:氧空位对Ni掺杂SnO2纳米粒子磁性的影响
机译:脉冲磁场引起的氧空位对水热法合成室温铁磁掺杂Ni的ZnO的影响
机译:氧空位增强了掺Ni TiO2薄膜的室温铁磁性
机译:氧气空位对Ni掺杂CeO_2稀磁半导体中半金属性的影响
机译:局部和远程结构:通过使用固态氧17和镓71 NMR光谱法以及X射线粉末衍射研究氧离子导体
机译:通过耦合到动态铁磁涡旋氮空位自旋的快速纳米级可寻址性
机译:Ni-Doped Bivo4具有V4 +物种和氧空位,用于高效的光电化学水分裂
机译:长程超精细相互作用和溶剂效应揭示有机氧化合物自由基离子的离域离域