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Effects of oxygen vacancy and local spin on the ferromagnetic properties of Ni-doped In_2O_3 powders

机译:氧空位和局部自旋对Ni掺杂In_2O_3粉体铁磁性能的影响

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摘要

(In_(1-x)Ni_x)_2O_3 (x = 0.03 and 0.06) powders were prepared by a solid-state reaction and a vacuum annealing process. The air-sintered samples initially showed paramagnetism, and then exhibited obvious room temperature ferromagnetism after vacuum annealing. The ferromagnetic signal almost disappeared after air annealing and reappeared after vacuum annealing. Hence, the ferromagnetism can be switched "on" and "off by alternate air and vacuum annealing. X-ray diffraction, high-resolution transmission electron microscopy, and field-cooled/zero-field-cooled measurements were performed. These analyses confirmed that there was no detectable trace of Ni or Ni oxide secondary phase in vacuum-annealed (In_(1-x)Ni_x)_.O_3 samples, and that the Ni ions were incorporated into the indium oxide lattice (substituting the In~(3+) ions). No ferromagnetic signal emerged from pure In_2O_3 powders regardless of undergoing vacuum or air annealing. These results revealed that oxygen vacancy and local spin are two factors that indispensably affect the ferromagnetic properties of the Ni-doped In_2O_3 system.
机译:通过固相反应和真空退火工艺制备(In_(1-x)Ni_x)_2O_3(x = 0.03和0.06)粉末。空气烧结样品最初表现出顺磁性,然后在真空退火后表现出明显的室温铁磁性。空气退火后,铁磁信号几乎消失,真空退火后又出现。因此,可以通过交替的空气和真空退火来“打开”和“关闭”铁磁性。进行了X射线衍射,高分辨率透射电子显微镜和场冷/零场冷测量。这些分析证实了在真空退火的(In_(1-x)Ni_x)_。O_3样品中没有检测到痕量的Ni或Ni氧化物第二相,并且Ni离子被掺入了氧化铟晶格中(取代了In〜(3+无论经过真空或空气退火,纯In_2O_3粉末都不会出现铁磁信号,这些结果表明氧空位和局部自旋是两个必不可少的因素,它们会影响Ni掺杂In_2O_3系统的铁磁性能。

著录项

  • 来源
    《Materials Chemistry and Physics》 |2012年第3期|796-799|共4页
  • 作者单位

    School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China,School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China;

    School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;

    School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;

    School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    annealing; diluted magnetic semiconductor; Ni-doped In_2O_3;

    机译:退火;稀磁半导体镍掺杂In_2O_3;

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