Crystallization mechanisms of (In_(15)Sb_(85))_(100-x)Bi_x phase change recording thin film

摘要

The (In_(15)Sb_(85))_(100-x)Bi_x films (x = 0-18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In_(15)Sb_(85))_(100-x)Bi_x film (x = 0-18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In_(15)Sb_(85))_(100-x)Bi_x films was amorphous and it would transform to Sb, InSb, Bi, and BiIn_2 coexisting phases after annealing at 250 ℃ for 30 min.