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首页> 外文期刊>Materials & design >Bipolar resistive switching and substrate effect in GdK2Nb5O15 epitaxial thin films with tetragonal tungsten bronze type structure
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Bipolar resistive switching and substrate effect in GdK2Nb5O15 epitaxial thin films with tetragonal tungsten bronze type structure

机译:具有四方钨青铜型结构的GdK2Nb5O15外延薄膜中的双极电阻切换和衬底效应

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Ferroelectric compound GdK2Nb5O15 with tetragonal tungsten bronze type structure thin films were grown by pulsed laser deposition on (001) SrRuO3/SrTiO3 and (001) SrRuO3/LSCO/MgO substrates respectively, in the same experimental conditions. Structural properties were investigated using X-ray diffraction in different modes theta-2 theta diffraction shows a single crystalline SRO and GKN phases, with c-axis perpendicular to the substrate. Phi-scans show for both SRO and GKN an epitaxial cube-on-cube growth. Reciprocal space mapping (RSM) was performed on GKN to determine the in-plane lattice parameters, and showed that GKN grown on MgO is more constrained comparing to STO. Room temperature electrical properties were investigated using platinum (Pt) top electrodes. Results show that GKN thin films deposited on MgO and STO substrates are resistively switchable. It was found that the nature of the substrate affects strongly the resistance ratio: GKN on SRO/LSCO/MgO showed a large hysteresis comparing to GKN on SRO/STO. Resistance switching in GKN is attributed to the oxygen vacancies migration which can be controlled by the substrate or the frequency sweep. (C) 2016 Elsevier Ltd. All rights reserved.
机译:在相同的实验条件下,通过脉冲激光沉积分别在(001)SrRuO3 / SrTiO3和(001)SrRuO3 / LSCO / MgO衬底上生长具有四方钨青铜型结构薄膜的铁电化合物GdK2Nb5O15。使用X射线衍射以不同的模式研究了结构性能theta-2 theta衍射显示出单晶SRO和GKN相,c轴垂直于基材。 phi扫描显示SRO和GKN都具有外延立方对立方生长。在GKN上​​进行了倒数空间映射(RSM),以确定面内晶格参数,结果表明,与STO相比,在MgO上生长的GKN受约束更大。使用铂(Pt)顶部电极研究了室温电性能。结果表明,沉积在MgO和STO衬底上的GKN薄膜可电阻切换。发现基材的性质对电阻比有很大影响:与SRO / STO上的GKN相比,SRO / LSCO / MgO上的GKN表现出较大的磁滞。 GKN中的电阻转换归因于氧空位迁移,该空位迁移可以通过基板或频率扫描来控制。 (C)2016 Elsevier Ltd.保留所有权利。

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