Department of Electronics Engineering Institute of Electronics, National Chiao Tung University, HsinChu, No. 1001, University Rd., 30010, Taiwan, R.O.C.,Department of Electronic Engineering, I-Shou University, No. 1, Sec. 1, Syuecheng Rd.,Kaohsiung, 840, Taiwan, R.O.C.;
Department of Electronics Engineering Institute of Electronics, National Chiao Tung University, HsinChu, No. 1001, University Rd., 30010, Taiwan, R.O.C.;
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, 33302,Taiwan, R.O.C.;
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, 33302,Taiwan, R.O.C.;
Institute of Electro-Optical Engineering, Chang Gung University, Tao-Yuan, 33302,Taiwan, R.O.C.;
机译:Gd_2O_3薄膜中的双极电阻开关效应,用于透明存储应用
机译:AG / AM-BTO / ITO电容器结构中无定形钡钛膜的双极电阻切换研究
机译:硫化银/银薄膜和纳米线阵列结构中双极电阻切换和时变SET过程的研究
机译:基于GD_2O_3薄膜及其电阻切换特性的透明电阻随机存取存储器(T-RRAM)
机译:五氧化二钒薄膜的电阻转换效应
机译:CoFe2O4薄膜中的价变化双极电阻开关与磁化开关
机译:聚(3,4-乙烯-二氧噻吩):聚(苯乙烯磺酸盐)薄膜的双极阻性开关特性