Plasma resistant modified I-line, deep UV, and e-beam resists

摘要

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 /spl mu/m resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the oxygen, fluorine, and chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g., polyimide, SiO/sub 2/, etc.).