NEW SILICON-CONTAINING NEGATIVE RESIST FOR DEEP-UV, I-RAY OR E-BEAM LITHOGRAPHY

摘要

PURPOSE: To provide a negative resist which is developable in an aq. base and has excellent O₂RIE resistance and high photosensitivity to deep UV light, I-ray beam and E-beam exposure by incorporating silicon into a base polymer and having chemically bonded photoactive parts in the base polymer. ;CONSTITUTION: This silicon-contg. polymer of the single component is synthesized by covalent bonding azide group-contg. carboxylic acid to a poly(4- hydroxybenzlyl)silcesquioxane polymer. The resulted resist material of a negative type is developable in the aq. base, has the excellent O₂RIE resistance and has the high photosensitive capable of corresponding to the processing quantity of excimer laser exposure. The resist material is most preferably applied as the upper layer of a two-layer resist system. At this time, the lower layer may be formed of polyimide or baked novolak resin. The resist may be patterned by using both of the deep UV light and the E-beam exposure and may be exposed by the I-ray beam in combination with a sensitizer.;COPYRIGHT: (C)1994,JPO