Preparation and Properties of Novel Heteroepitaxial Metal/Ferroelectric/Metal/Insulator/Semiconductor (MFMIS) Structure for Pt/Pb(Zr,Ti)O_3/(La,Sr)CoO_3/SrTiO_3/(Ni,Zn,Fe)Fe_2O_4/ (MgO-Al_2O_3)/CeO_2/YSZ/Si Thin Films

摘要

Heteroepitaxial Pb(Zr,Ti)O_3(PZT)/(La, Sr)CoO_3(LSCO)/SrTiO_3(ST)/(Ni,Zn,Fe)Fe_2O_4(NZF)/(MgO- AL_2O_3)/CeO_2/YSZ/Si(001) stacked thin film was prepared. This film showed both magnetic and ferroelectric properties. LSCO layer was inserted as a "floating gate" in metal-ferroelectrics- metal-insulator-semiconductor (MFMIS) to apply external electrical field on the PZT layer. ST layer was used to allow epitaxial growth of LSCO layer on the NZF layer. To evaluate the effect of both fixed and mobile charges in the stacked thin films, the current-voltage (C-V) measurements were carried out.