Chemically deposited (100)-oriented BaTiO_3 films with highly concentrated solution using high crystallinity BaTiO_3 as a buffer layer

摘要

BaTiO_3 films with thickness of ～1 μm were prepared by chemical solution deposition on LaNiO_3/Pt/TiO_x/SiO_2/Si substrate with a thin highly (100)-oriented and high crystallinity BaTiO_3 thin film (～140 nm) as a buffer layer. The BaTiO_3 films prepared by using a 0.5 mol/L solution have high crystallinity and still show (100) preferred orientation. The electrical properties of the (100)-oriented BaTiO_3 films prepared by this process have been studied. A dielectric constant of ～910 and a loss tangent of ～3.5% (1 kHz) were obtained. The remanent polarization (2 P_r) and coercive field (2 E_c) are 4.0 μC/cm~2 and 35 kV/cm, respectively.