Effect of LaNiO_3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO_3 thin films on Si substrate

摘要

BaTiO_3 films were deposited on LaNiO_3 buffered Si substrates with different LaNiO_3 thickness. The LaNiO_3 layer thickness dependence of the orientation, crystallinity, dielectric and leakage current properties for the BaTiO_3 films was investigated. X-ray diffraction and scanning electron microscope results show that the increase of LaNiO_3 thickness will improve the crystallization and grain size for the BaTiO_3 films. Electrical measurements indicate that the BaTiO_3 film grown on thicker LaNiO_3 layer tends to exhibit higher dielectric constant, lower internal defect concentration and better insulating properties. The improved dielectric properties for BaTiO_3 film on thicker LaNiO_3 is suggested due to the combined result of improved electrical properties for LaNiO_3 and improved microstructural properties for BaTiO_3.