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机译:数控局部湿法刻蚀改善块状硅片厚度均匀性
Research Center for Ultra-precision Science and Technology, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan;
Research Center for Ultra-precision Science and Technology, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan;
Research Center for Ultra-precision Science and Technology, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan;
Research Center for Ultra-precision Science and Technology, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan;
Research Center for Ultra-precision Science and Technology, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871, Japan;
SOI; silicon wafer; local wet etching; etching; figuring; ultraprecision machining;
机译:通过数控局部湿法刻蚀改善块状硅片的厚度均匀性
机译:通过数控局部湿法刻蚀改善厚SOI的厚度均匀性
机译:湿法刻蚀硅晶圆厚度的新方法
机译:数控局部湿法刻蚀改善块状硅片厚度均匀性
机译:使用原位椭偏仪在快速热处理中测量和控制硅片温度和氧化膜厚度。
机译:异丙醇浓度和刻蚀时间对低电阻晶体硅晶片湿化学各向异性刻蚀的影响
机译:硅片压电陶瓷湿蚀刻和均匀晶片级变薄
机译:在硅晶片的湿化学蚀刻中保护芯片角的技术