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Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

机译:选择性带隙可抑制薄膜体声谐振器结构中的杂散声模。

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摘要

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section of FBAR structure coupled with the PnC. In the presence of PnC, the simulation results show the evidence of a selective band gap where the parasitic mode is prohibited. The quality factor of the FBAR is enhanced by the introduction of the PnC. Indeed, the resonance and antiresonance frequencies passed from 1000 and 980 (without PnC) to 2350 and 1230 (with PnC), respectively. This is accompanied by a decrease in the electromechanical coupling coefficient from 10.60% to 6.61%.
机译:在这项工作中,我们在数值上研究了Lamb波在由压电ZnO层夹在两个与Bragg反射器耦合的Mo电极之间形成的薄膜压电谐振器(FBAR)结构中的传播。因此,该系统被认为是声子晶体(PnC)板。目的是抑制被认为是杂散模式的一阶对称兰姆波模式,该杂波模式是由于在结构的嵌入的横向末端处的反射而引起的横向驻波的建立而引起的;这种杂散模式叠加在FBAR的主要纵向模式共振上。有限元研究,使用谐波和本征频率分析,是在结合PnC的FBAR结构截面上进行的。在存在PnC的情况下,仿真结果表明存在选择性带隙的证据,其中禁止了寄生模式。引入PnC可以提高FBAR的质量因数。实际上,谐振和反谐振频率分别从1000和980(无PnC)传递到2350和1230(有PnC)。这伴随着机电耦合系数从10.60%降低到6.61%。

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  • 来源
    《Journal of Vibration and Acoustics》 |2018年第3期|031018.1-031018.7|共7页
  • 作者单位

    Ctr Dev Adv Technol, Cite 20 Aout 1956,Baba Hassen BP 17, DZ-16303 Algiers, Algeria;

    Ctr Dev Adv Technol, Cite 20 Aout 1956,Baba Hassen BP 17, DZ-16303 Algiers, Algeria;

    USDB, Fac Sci, Micro & Nano Phys Grp, BP 270, DZ-09000 Blida, Algeria;

    Univ Bourgogne Franche Comte, CNRS, Inst FEMTO ST, F-25044 Besancon, France;

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