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首页> 外文期刊>Journal of Vibration and Acoustics >Tuning of Acoustic Bandgaps in Phononic Crystals With Helmholtz Resonators
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Tuning of Acoustic Bandgaps in Phononic Crystals With Helmholtz Resonators

机译:用亥姆霍兹谐振器调谐声子晶体中的声带隙

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In this paper, acoustic wave propagation in a two- or three-dimensional phononic crystal consisting of Helmholtz resonators embedded in a fluid matrix is studied. The band structures are calculated to discuss the influence of the geometry topology of Helmholtz resonators on the bandgap characteristics. It is shown that a narrow bandgap will appear in the lower frequency range due to the resonance of the Helmholtz resonators. The width and position of this resonance bandgap can be tuned by adjusting the geometrical parameters of the Helmholtz resonator. The position of the resonance bandgap can be evaluated by the resonance frequency of the Helmholtz resonator. A decrease in the size of the opening generally results in a lower position and a smaller width of the bandgap. The system with one opening exhibits a wider bandgap in a lower position than the system with two openings.
机译:在本文中,研究了声波在二维或三维声子晶体中的传播,该声子晶体由嵌入在流体矩阵中的亥姆霍兹共振器组成。计算带结构以讨论亥姆霍兹谐振器的几何拓扑对带隙特性的影响。结果表明,由于亥姆霍兹共振器的共振,较窄的带隙将出现在较低的频率范围内。该谐振带隙的宽度和位置可以通过调整亥姆霍兹谐振器的几何参数来调整。共振带隙的位置可以通过亥姆霍兹共振器的共振频率来评估。开口尺寸的减小通常导致带隙的位置较低且宽度较小。与具有两个开口的系统相比,具有一个开口的系统在更低的位置处具有更大的带隙。

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