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Process for producing an acoustic device having a controlled-bandgap phononic crystal structure

机译:具有受控带隙声子晶体结构的声学装置的制造方法

摘要

A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.
机译:一种用于制造具有声子晶体结构的声学装置的方法,该方法包括在分布在第二介质的矩阵中的第一介质中产生的夹杂物,以阻止声波在带隙频带内的传播,该方法包括:定义所述夹杂物的几何参数,具有与所述矩阵接触的壁,所述壁与所述结构的平面的法线形成至少一个非零的第一壁角,所述几何参数包括所述第一壁角;确定与所述带隙的频率位置随所述壁角的变化有关或与所述带隙的宽度随所述壁角的变化有关的函数;根据预先确定的一个或多个函数,为带隙的选定频率位置和/或选定宽度确定所述至少第一角度;在由所述第二介质形成的所述基质中产生至少具有所述第一壁角的所述夹杂物。

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