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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >The Effects Of Oxygen Plasma On The Chemical Composition And Morphology Of The Ru Capping Layer Of The Extreme Ultraviolet Mask Blanks
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The Effects Of Oxygen Plasma On The Chemical Composition And Morphology Of The Ru Capping Layer Of The Extreme Ultraviolet Mask Blanks

机译:氧等离子体对极紫外掩模空白板Ru覆盖层化学成分和形貌的影响

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Contamination removal from extreme ultraviolet (EUV) mask surfaces is one of the most important aspects to improve reliability for the next generation of EUV lithography. The authors report chemical and morphological changes of the ruthenium (Ru) mask surface after oxygen plasma treatment using surface sensitive analytical methods: x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and transmission electron microscopy (TEM). Chemical analysis of the EUV masks shows an increase in the subsurface oxygen concentration, Ru oxidation, and surface roughness. XPS spectra at various photoelectron takeoff angles suggest that the EUV mask surface was covered with chemisorbed oxygen after oxygen plasma treatment. It is proposed that the Kirkendall effect is the most plausible mechanism that explains the Ru surface oxidation. The etching rate of the Ru capping layer by oxygen plasma was estimated to be 1.5 ± 0.2 A/min, based on TEM cross sectional analysis.
机译:从极紫外(EUV)掩模表面去除污染物是提高下一代EUV光刻可靠性的最重要方面之一。作者报告了使用表面敏感的分析方法(包括X射线光电子能谱(XPS),原子力显微镜和透射电子显微镜(TEM))进行氧等离子体处理后,钌(Ru)掩模表面的化学和形态变化。 EUV面罩的化学分析表明,地下氧浓度,Ru氧化和表面粗糙度增加。在各种光电子起飞角处的XPS光谱表明,在氧等离子体处理后,EUV掩模表面被化学吸附的氧气覆盖。有人提出,柯肯达尔效应是解释Ru表面氧化的最合理的机理。根据TEM截面分析,通过氧等离子体对Ru覆盖层的蚀刻速率估计为1.5±0.2A / min。

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