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机译:分子束外延作为生长独立式ZnZn(立方)GaN层和衬底的方法
School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
rnSchool of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
机译:使用等离子体辅助分子束外延技术优化块状GaN衬底上GaN层和GaN / AlGaN异质结的生长
机译:分子束外延在GaN(0001)上Stranski-Krastanov生长过程中掺锌InN湿润层的原位揭示
机译:通过分子束外延对GaN纳米线阵列的GaN纳米线阵列的选择性区域生长的极性控制的GaN / AlN成核层
机译:锌 - 混合(立方)GaN和A1gan层,由分子束外延的结构Andbulk晶体
机译:六方氮化硼/石墨烯异质结构,六方氮化硼层和立方氮化硼纳米点的分子束外延生长
机译:分子束外延在独立式GaN光栅上InGaN / GaN量子阱的图案生长
机译:通过分子束外延在stranski-Krastanov生长GaN(0001)期间原位揭示闪锌矿InN润湿层