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首页> 外文期刊>Journal of Vacuum Science & Technology >Suitability of low-work-function titanium nitride coated transfer mold field-emitter arrays for harsh environment applications
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Suitability of low-work-function titanium nitride coated transfer mold field-emitter arrays for harsh environment applications

机译:低工作功能氮化钛涂层转移模具场致发射器阵列在恶劣环境下的适用性

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摘要

Low-work-function titanium nitride (TiN) coated transfer mold field-emitter arrays (TiN-FEAs) were fabricated by the transfer metal mold method. This method has potential for realizing stable large-area aerospace nanodevices that are resistant to the harsh plasma atmospheres often experienced by electric propulsion engines in space. Another application is for production of vacuum nanoelectronic devices such as field-emission displays that are suitable for highly oxidizing atmospheres. TiN-FEAs have sharp tips with radii of 6.8 nm, and their work function is just 3.2 eV compared to approximately 5.0 eV for conventional emitter materials such as carbon nanotubes. The turn-on fields of TiN-FEAs are as low as 15.4 V/μm, and their anode-to-emitter distance is 10 /μm. Field-emission characteristics of TiN-FEAs were evaluated in situ at a pressure as high as 10~(-3) Pa and by irradiation with oxygen radicals at 10~(15) cm~(-1) s~(-1) a flux several orders of magnitude higher than orbital satellites typically experience. As the treatment time increased, the turn-on fields of TiN-FEAs changed only slightly from 15.4 to 18.8 V/μm, with no observed change in the work function during the in situ oxygen radical treatment. In summary, the TiN-FEAs exhibited stable field-emission characteristics and a high level of resistance to harsh environments.
机译:通过传递金属模制法制备了低功函数氮化钛(TiN)涂层的传递模场致发射体阵列(TiN-FEA)。这种方法具有实现稳定的大面积航空航天纳米器件的潜力,该器件可抵抗太空中电推进发动机经常遇到的恶劣等离子气氛。另一个应用是用于生产真空纳米电子器件,例如适用于高氧化性气氛的场发射显示器。 TiN-FEA的尖端尖锐,半径为6.8 nm,其功函仅为3.2 eV,而传统的发射极材料(如碳纳米管)的功函约为5.0 eV。 TiN-FEA的导通场低至15.4 V /μm,其阳极到发射极的距离为10 /μm。 TiN-FEA的场发射特性是在10〜(-3)Pa的高压下并通过在10〜(15)cm〜(-1)s〜(-1)a处进行氧自由基辐照来评估的通量比通常的轨道卫星高几个数量级。随着处理时间的增加,TiN-FEA的导通场仅从15.4 V /μm轻微变化,在原位氧自由基处理过程中未观察到功函数的变化。总之,TiN-FEA表现出稳定的场发射特性和对恶劣环境的高度抵抗力。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第2期|p.02B112-1-02B112-5|共5页
  • 作者单位

    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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