Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal-semiconductor interfaces by photoelectror spectroscopy and electrical characterization techniques

摘要

Schottky barrier height (ΦSBh) tuning from the insertion of dipole providing materials at the TaN/ Si and TaN/GaAs interface are investigated using photoelectron spectroscopy and electrical techniques. In-situ processing and characterization of these contact interfaces is utilized to gain understanding of the formation of the dipole at the AlO_x/SiO_2 interface. Changes in both the band bending and vacuum work function by the insertion of AlO_x/SiO_2 at the interface are observed on both Si and GaAs substrates and are correlated with a large reduction in the ΦBH on Si. Applications of this contact scheme for contact resistivity reduction, extremely shallow junctions, and Schottky barrier metal-oxide-semiconductor field effect devices are also discussed.