Comparison of In_0.33Al_0.67As/In_0.34Ga_0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded duffer layers

摘要

Metamorphic high electron mobility transistors with 33/100 indium content have been grown on GaAs by molecular beam epitaxy. Linear graded InAiAs buffer layers were used to relax the mismatch strain between the InAiAs/InGaAs heterostructure and the GaAs substrate. The thickness of the graded buffer is shown to influence strain relaxation (tilt and residual strain), surface roughness, and Hall mobility.