Chemistry and electrical properties of surfaces of GaN and GaN/AiGaN heterostructures

摘要

Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance-voltage, and current-voltage measurements. Form in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2x2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template.