Gas sensing properties of copper gate metal-oxide-semiconductor capacitors

摘要

Metal-oxide-semiconductor capacitors with sputtered 100 nm thick copper gates, operated at 180deg.c, are sensitive to NO_2, with no cross sensitivity either to H_2 or CO, in inert atmospheres and air. Sensitivity to NO is present in air only. Flatband voltages shift positive with NO_2 stimulus, similarly to gold gates of comparable morphology, but responses are an order of magnitude smaller.