机译:具有高击穿电压的耗尽型和增强型In_(0.49)Ga_(0.51)P / InGaAs / AlGaAs高电子迁移率晶体管
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, Republic of China;
机译:具有数字合金势垒的In_(0.49)Ga_(0.51)P / In_(0.49)(Ga_(0.6)Al_(0.4))_(0.51)P单量子阱结构的光学和传输性质
机译:通过分子束外延生长的数字合金In_(0.49)Ga_(0.51)P / In_(0.49)(Ga_(0.6)Al_(0.4))_(0.51)P多量子阱的光学表征
机译:数字合金In_(0.49)(Ga_(1-z)Al_z)_(0.51)P / GaAs和InGaP / In_(0.49)(Ga_(1-z)Al_z)_(0.51)P多量子的光学性质分子束外延生长的孔
机译:高性能IN_(0.49)GA_(0.51)P / INGAAS单双和双δ掺杂的假晶高电子迁移率晶体管(δ-PHEMT)
机译:In(0.49)Ga(0.51)P / GaAs异质结双极晶体管的建模,用于ADC和MMIC电路设计。
机译:非合金PDGE欧姆接触的应用自对准栅极藻类/ INGAAS假形高电子迁移率晶体管
机译:alGaas / Gaas / alGaas和alGaas / InGaas / alGaas热电子晶体管的瞬态模拟