首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Cs halide photocathode for multi-electron-beam pattern generator
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Cs halide photocathode for multi-electron-beam pattern generator

机译:用于多电子束图形发生器的Cs卤化物光电阴极

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A unique approach to photocathode operation is described in this article. We utilize a relatively large bandgap CsBr photocathode material that under normal conditions would not photoemit with radiation energy less than the bandgap plus the work function. However, the material can be activated by proper UV illumination to obtain photoemission at wavelengths as long as 532 nm. Photoyields as high as several hundred nA/mW and current densities greater than 100 A/cm~2 have been routinely obtained with lifetimes (50% degradation) well in excess of 200 h at 257 nm. The performance of the photocathode meeting all the requirements for a multi-electron-beam pattern generator will be presented.
机译:本文介绍了一种独特的光电阴极操作方法。我们使用了带隙较大的CsBr光电阴极材料,该材料在正常条件下不会以小于带隙加功函数的辐射能进行光发射。但是,可以通过适当的紫外线照射激活该材料,以获取波长长达532 nm的光发射。常规获得的光产率高达几百nA / mW,电流密度大于100 A / cm〜2,在257 nm下的寿命(50%降解)远超过200 h。将介绍满足多电子束图形发生器所有要求的光电阴极性能。

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