首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Luminescent properties of SrGa2S4 : Sm thin-film phosphors under low-voltage excitation
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Luminescent properties of SrGa2S4 : Sm thin-film phosphors under low-voltage excitation

机译:低压激发下SrGa2S4:Sm薄膜荧光粉的发光特性

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Sm-activated SrGa2S4 thin-film phosphors (TFPs) were prepared in order to develop red-emitting TFPs, because so far we have reported on low-voltage cathodoluminescence (CL) properties of Ceor Eu-activated SrGa2S4 TFPs showing blue or green emission, respectively. The films were prepared by multisource deposition (MSD), and annealed in H2S atmosphere after the deposition. It was shown by x-ray diffraction (XRD) measurement that from the as-deposited films containing GaS phase, SrGa2S4 phase was formed by the annealing. The formation mechanism of SrGa2S4 thin film is thought to be due to the reaction Sr+2GaS+2H(2)S-->SrGa2S4+2H(2)up arrow during the annealing. The films annealed at temperatures higher than 800 degreesC showed a red emission with a broad band peaked at about 700 nm, which might be based on the transition of 4f(5) 5 d-->4f(6) of Sm2+, although the CL intensity was weak. (C) 2004 American Vacuum Society.
机译:制备Sm活化的SrGa2S4薄膜荧光粉(TFP)是为了产生发红光的TFP,因为到目前为止,我们已经报道了Ceor Eu活化的SrGa2S4 TFP的低压阴极发光(CL)性能,显示出蓝色或绿色发光,分别。通过多源沉积(MSD)制备薄膜,并在沉积后在H2S气氛中进行退火。通过X射线衍射(XRD)测量表明,从包含GaS相的沉积薄膜中,通过退火形成了SrGa 2 S 4相。 SrGa2S4薄膜的形成机理被认为是由于退火期间Sr + 2GaS + 2H(2)S-> SrGa2S4 + 2H(2)向上箭头的反应。在高于800摄氏度的温度下退火的薄膜显示出红色发射,其宽带峰在700 nm处达到峰值,这可能是由于Sm2 +的4f(5)5 d-> 4f(6)的跃迁所致强度很弱。 (C)2004年美国真空学会。

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