High-energy ion projection for deep ion implantation as a low cost high throughput alternative for subsequent epitaxy processes

摘要

Three-dimensional (3D) doping into depths up to 40 μm is of great interest for numerous device types. In particular, the production of high-power devices requires low cost vertically structured doping. State of the art epitaxial growth combined with diffusion and/or low-energy ion implantation is time consuming and cost intensive. We suggest 3D structured high-energy ion projection implantation as a simple cost effective and reliable alternative. This method allows controlled fast doping with high homogeneity and reproducibility. This article outlines some details of a feasibility study of the technique and discusses advantages and problems.