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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Ultraviolet curing imprint lithography on flexible indium tin oxide substrates
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Ultraviolet curing imprint lithography on flexible indium tin oxide substrates

机译:柔性铟锡氧化物基板上的紫外线固化压印光刻

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In this study, an imprint lithography technique was performed to transfer patterns onto indium tin oxide (ITO)-coated poly(ethylene terephthalate) (PET) substrates by embossing an etch barrier on the substrates and curing them under irradiation at room temperature. The etch barriers containing glycidyl methacrylate were spectrally analyzed to verify that they were deposited on the ITO-PET substrates firmly and rapidly with minimum variation in dimensions. To fabricate the ITO patterns, the substrate was etched by reactive-ion etching to eradicate the residual layers and by wet etching to carve the undisplaced ITO lines. Scanning electron microscopy observation and profilometric analysis for these processes showed only about 2% of linewidth shrinkage after polymer cross linking, easily compensated in mask design in applications. Also, the 150 nm of ruled features on the pattern were successfully transferred using the same resist. Moreover, the flexible ITO patterns illuminated the practical electroluminescence device, verifying that UV-curing imprint lithography is feasible for patterning ITO-PET surfaces. (c) 2006 American Vacuum Society.
机译:在这项研究中,通过在基板上压印蚀刻阻挡层并在室温下进行辐射固化,采用压印光刻技术将图案转移到氧化铟锡(ITO)涂层的聚对苯二甲酸乙二醇酯(PET)基板上。对包含甲基丙烯酸缩水甘油酯的蚀刻阻挡层进行光谱分析,以验证它们以最小的尺寸变化牢固,快速地沉积在ITO-PET基板上。为了制造ITO图案,通过反应离子蚀刻来蚀刻基板以消除残留层,并且通过湿蚀刻来蚀刻未移位的ITO线。这些过程的扫描电子显微镜观察和轮廓分析表明,在聚合物交联之后,线宽收缩仅占线宽收缩的2%左右,很容易在应用中的掩模设计中得到补偿。同样,使用相同的抗蚀剂成功转移了图案上的150 nm直纹特征。此外,柔性ITO图案照亮了实际的电致发光设备,证明了UV固化压印光刻技术可用于构图ITO-PET表面。 (c)2006年美国真空学会。

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