首页> 外文期刊>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films >Study of mercury cadmium telluride (MCT) surfaces by automatic spectroscopic ellipsometry (ASE) and by electrolyte electroreflectance (EER)
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Study of mercury cadmium telluride (MCT) surfaces by automatic spectroscopic ellipsometry (ASE) and by electrolyte electroreflectance (EER)

机译:通过自动椭圆偏振光谱法(ASE)和电解质电反射率(EER)研究碲化汞镉(MCT)表面

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A systematic study of line shapes obtained by electrolyte electroreflectance (EER) and by automatic spectroscopic ellipsometry (ASE) on samples of mercury cadmium telluride (MCT) with varying densities of defects has been carried out. The results show that the two techniques yield in all cases the same value for the interband transition energies Ej. Because the values of the Ej are quantitatively related to the alloy composition x, it is clear that both ASE and EER can be used to carry out studies of the alloy composition. On the other hand, the values of the linewidths Γj yielded by the two techniques often do not agree. In those cases in which the etch pit density is less than 106/cm2, the values agree approximately; otherwise, EER yields much larger values. The difference between the two techniques is, of course, the use of an electric field modulated at very low frequencies (EER). We show that the modulating electric field causes an electrostriction and polarization of the defects in MCT. These effects, which have not been taken into account in previous theories of electroreflectance, are shown to give rise to first‐ and second‐derivative line shapes proportional to the Stark shifts ΔEj and to a shift Δσ 2 related to the overall defect scattering strength, respectively. These new line shapes dominate the usual third‐derivative line shape for defective materials. A simple interpretation of our experimental results suggests that the relative Stark shifts ΔEj are associated with plasticity, long‐range strains and extended defects, and that the shift Δσ2 arises from polarizable charged defects. Thus, the treatment present here, by allowing one to determine values for ΔEj and Δσ2 as well as values for Γj in agreement with -n-nASE, give important physical information not previously available on defects in MCT. The quantitative determination of the defect‐related parameters has allowed us to establish a hierarchy of quality among all the epitaxial techniques by comparison to bulk single crystal samples.
机译:通过电解质电反射(EER)和自动光谱椭偏仪(ASE)对具有不同密度缺陷的碲化汞镉(MCT)样品进行了线形的系统研究。结果表明,两种技术在所有情况下对于带间跃迁能量Ej都具有相同的值。由于Ej的值与合金成分x定量相关,因此很显然ASE和EER均可用于进行合金成分的研究。另一方面,由两种技术得出的线宽Γj的值通常不一致。在蚀刻坑密度小于106 / cm 2的情况下,该值近似一致;优选地,该值一致。否则,EER会产生更大的值。两种技术之间的区别当然是使用以非常低的频率(EER)调制的电场。我们表明,调制电场会引起MCT中缺陷的电致伸缩和极化。这些效应未在先前的电反射理论中加以考虑,但已显示出与一阶Stark位移ΔEj成正比的一阶和二阶微分线形以及与整体缺陷散射强度有关的一阶Δσ2,分别。这些新的线形主导了有缺陷材料的常用三阶导数线形。对我们的实验结果的简单解释表明,相对Stark位移ΔEj与可塑性,长期应变和扩展缺陷相关,并且位移Δσ2源自极化带电缺陷。因此,通过允许与-n-nASE一致地确定ΔEj和Δσ2的值以及Γj的值,此处提出的处理方法可以提供重要的物理信息,而这些信息以前是无法在MCT中获得的。缺陷相关参数的定量确定使我们能够通过与块状单晶样品进行比较,在所有外延技术之间建立质量等级。

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