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首页> 外文期刊>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films >Investigation of the surface chemical and electronic states of pyridine-capped CdSe nanocrystal films after plasma treatments using H2, O2, and Ar gases
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Investigation of the surface chemical and electronic states of pyridine-capped CdSe nanocrystal films after plasma treatments using H2, O2, and Ar gases

机译:使用H2,O2和Ar气体进行等离子体处理后,吡啶包覆的CdSe纳米晶体薄膜的表面化学和电子态研究

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摘要

Surface chemical bonding and the electronic states of pyridine-capped CdSe nanocrystal films were evaluated using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy before and after plasma treatments using H2, O2, and Ar gases from the viewpoint of studying the effects of surface capping organic molecules and surface oxidation. Surface capping organic molecules could be removed during the plasma treatment due to the chemical reactivity, ion energy transfer, and vacuum UV (VUV) of the plasma gases. With O2 plasma treatment, surface capping organic molecules were effectively removed but substantial oxidation of CdSe occurred during the plasma treatment. The valence band maximum energy (EVBM) of CdSe nanocrystal films mainly depends on the apparent size of pyridine-capped CdSe nanocrystals, which controls the interparticle distance, and also on the oxidation of CdSe nanocrystals. Cd-rich surface in O2 and H2 plasma treatments partially would compensate for the decrease in EVBM. After Ar plasma treatment, the smallest value of EVBM resulted from high VUV photon flux, short wavelength, and ion energy transfer. The surface bonding states of CdSe had a strong influence on the electronic structure with the efficient strip of capping molecules as well as different surface oxidations and surface capping molecule contents.
机译:从研究表面覆盖有机物的效果的角度,在使用H2,O2和Ar气体进行等离子体处理之前和之后,使用X射线光电子能谱和紫外光电子能谱评估了吡啶包覆的CdSe纳米晶体膜的表面化学键合和电子态。分子和表面氧化。由于等离子气体的化学反应性,离子能量转移和真空UV(VUV),在等离子处理期间可以除去表面覆盖的有机分子。通过O2等离子体处理,可以有效去除表面覆盖的有机分子,但是在等离子体处理过程中CdSe发生了实质性氧化。 CdSe纳米晶体薄膜的价带最大能量(EVBM)主要取决于吡啶包覆的CdSe纳米晶体的表观尺寸,该尺寸控制粒子间的距离,还取决于CdSe纳米晶体的氧化。 O2和H2等离子体处理中富含Cd的表面将部分补偿EVBM的降低。经过Ar等离子体处理后,EVBM的最小值是由高VUV光子通量,短波长和离子能量转移引起的。 CdSe的表面键合状态对电子结构的影响很大,其有效的封端分子条带以及不同的表面氧化和表面封端分子含量均受到影响。

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