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Assessing Requirements for Wafer Environment Control

机译:晶圆环境控制评估要求

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摘要

A methodology for assessing wafer environment control (WEC) needs based on process specific defect density (D_o) goals, actual process and airborne particle levels, particle deposition velocity and wafer exposure time, as well as risks associated with changes in these factors is presented. The motivation is to ultimately determine cost-effective wafer isolation technology (WIT) strategies needed to achieve the required levels of paniculate contamination at the wafer surface. The means of extending the methodology to other potentially yield-limiting nonparticulate airborne contaminants is also discussed.
机译:提出了一种基于过程特定缺陷密度(D_o)目标,实际过程和空气中微粒水平,微粒沉积速度和晶片暴露时间以及与这些因素变化相关的风险的评估晶片环境控制(WEC)需求的方法。这样做的动机是最终确定在晶片表面达到颗粒污染所需水平所需的经济有效的晶片隔离技术(WIT)策略。还讨论了将该方法扩展到其他可能限制产量的非微粒空气传播污染物的方法。

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