Chemical Complementarity in the Contacts for Nanoscale Organic Field-Effect Transistors

摘要

Shrinking the device dimensions of polycrystalline thin film organic transistors to the nanoscale enables charge transport in single grains to be probed,eliminating grain boundaries that give rise to deleterious traps and poor electronic coupling.However,when the size of the devices is severely reduced,new challenges emerge because the resistance of the contact between metal and molecule exceeds the channel resistance and dominates the device properties.