Blocking the Lateral Film Growth at the Nanoscale in Area-Selective Atomic Layer Deposition

摘要

Atomic layer deposition (ALD) is an inorganic film deposition technique based on the sequential use of self-terminating gas-solid reactions. By its nature, ALD facilitates straightforward control of the film thickness with nanometer precision. Another unique feature of ALD is the conformal growth of films on substrates of virtually any shape. A recent example showing the reliability and economic potential of ALD is the fabrication of gate dielectrics in Intel's latest microprocessors, in which extremely thin and pinhole-free films are required.