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Label-Free Biosensors Based on Aptamer-Modified Graphene Field-Effect Transistors

机译:基于适体修饰的石墨烯场效应晶体管的无标记生物传感器

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摘要

A label-free immunosensor based on an aptamer-modified graphene field-effect transistor (G-FET) is demonstrated. Immunoglobulin E (IgE) aptamers with an approximate height of 3 nm were successfully immobilized on a graphene surface, as confirmed by atomic force microscopy. The aptamer-modified G-FET showed selective electrical detection of IgE protein. From the dependence of the drain current variation on the IgE concentration, the dissociation constant was estimated to be 47 nM, indicating good affinity and the potential for G-FETs to be used in biological sensors.
机译:展示了一种基于适体修饰的石墨烯场效应晶体管(G-FET)的无标记免疫传感器。原子力显微镜证实,大约3 nm高度的免疫球蛋白E(IgE)适体已成功固定在石墨烯表面。适体修饰的G-FET显示IgE蛋白的选择性电检测。根据漏极电流变化对IgE浓度的依赖性,解离常数估计为47 nM,表明良好的亲和力以及在生物传感器中使用G-FET的潜力。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2010年第51期|p.18012-18013|共2页
  • 作者单位

    The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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