机译:共晶Ga-In(EGaln)顶部触点在隧道结中对亚芳基乙炔硫醇盐的SAM进行量子干扰的证据。
Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AGGroningen, The Netherlands;
Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AGGroningen, The Netherlands;
Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AGGroningen, The Netherlands;
Nano-Science Center and Department of Chemistry, University of Copenhagen, Universitetsparken 5,2100 Copenhagen 0, Denmark;
Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AGGroningen, The Netherlands;
机译:带有Ga2O3 / EGaln顶部电极的SAM基结与其他大面积隧穿结的比较
机译:带有Ga2O3 / EGaln顶部电极的SAM基结与其他大面积隧穿结的比较
机译:量子干扰对铁磁体/铁磁体/ d波超导体双隧道结中隧穿电导和散粒噪声的影响-艺术。没有。 214512
机译:基于EGaln的隧道结中的量子干扰
机译:量子霍尔隧道结:Luttinger液体物理学,量子相干效应和分数量子数。
机译:通过键拓扑和官能团控制包括自组装单分子层的隧道结中的破坏性量子干扰
机译:共晶Ga-In(EGaIn)顶部触点在隧道结中对亚芳基乙炔硫醇盐的SAM产生量子干扰的证据。
机译:约瑟夫森隧道结中的宏观量子隧穿和单个小隧道结中的库仑阻塞。