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Superconductivity in the Narrow-Gap Semiconductor CsBi_4Te_6

机译:窄间隙半导体CsBi_4Te_6中的超导性

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摘要

Superconductivity was discovered in the narrow-gap semiconductor CsBi_4Te_6. A superconducting transition around 4.4 K was observed for p-type samples in temperature-dependent resistivity and magnetic susceptibility data. Stoichiometric CsBi_4Te_6 is not a superconductor. A remarkably high critical field of ~10 T was estimated from the field-dependent resistivity data. The strongly anisotropic CsBi_4Te_6 system is monoclinic and the first member of a larger homologous series Cs_4[Bi_(2n+4)Te_(3n+6)] that exhibits unconventional superconductivity, suggesting that proper doping of the homologous series may create a novel class of superconductors from semiconductors.
机译:在窄间隙半导体CsBi_4Te_6中发现了超导性。在与温度相关的电阻率和磁化率数据中,对于p型样品,观察到约4.4 K的超导转变。化学计量的CsBi_4Te_6不是超导体。根据与场有关的电阻率数据,估算出约10 T的非常高的临界场。强各向异性CsBi_4Te_6系统是单斜晶系,并且是较大同源序列Cs_4 [Bi_(2n + 4)Te_(3n + 6)]的第一成员,该序列表现出非常规的超导性,这表明对同源序列的适当掺杂可能会创建一类新的半导体的超导体。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2013年第39期|14540-14543|共4页
  • 作者单位

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States;

    Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:12:53

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