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Tuning the Rectification Ratio by Changing the Electronic Nature (Open-Shell and Closed-Shell) in Donor-Acceptor Self-Assembled Monolayers

机译:通过改变供体-受体自组装单分子层中的电子性质(开壳和闭壳)来调整整流比

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摘要

This Communication describes the mechanism of charge transport across self-assembled monolayers (SAMs) of two donor-acceptor systems consisting of a polychlorotrìphenylmethyl (PTM) electron-acceptor moiety linked to an electron-donor ferrocene (Fc) unit supported by ultraflat template-stripped Au and contacted by a eutectic alloy of gallium and indium top contacts. The electronic and supramolecular structures of these SAMs were well characterized. The PTM unit can be switched between the nonradical and radical forms, which influences the rectification behavior of the junction. Junctions with nonradical units rectify currents via the highest occupied molecular orbital (HOMO) with a rectification ratio R = 99, but junctions with radical units have a new accessible state, a single-unoccupied molecular orbitai (SUMO), which turns rectification off and drops R to 6.
机译:该来文描述了电荷通过两个供体-受体系统的自组装单层(SAMs)进行电荷传输的机制,该系统由聚氯三苯甲基(PTM)电子受体部分组成,该部分连接至由超平模板剥离的电子供体二茂铁(Fc)单元金与镓和铟的顶部共晶合金接触。这些SAM的电子和超分子结构得到了很好的表征。 PTM单元可以在非自由基形式和自由基形式之间切换,这会影响结的整流行为。具有非自由基单元的结通过整流比为R = 99的最高占据分子轨道(HOMO)整流电流,但是具有自由基单元的结具有新的可访问状态,即单空分子轨道(SUMO),可关闭整流并下降R至6。

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  • 来源
    《Journal of the American Chemical Society》 |2017年第12期|4262-4265|共4页
  • 作者单位

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, 08193 Bellaterra, Spain;

    Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore;

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, 08193 Bellaterra, Spain;

    Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore;

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, 08193 Bellaterra, Spain;

    Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore,Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore;

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, 08193 Bellaterra, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:07:53

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