IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT METHODS FOR THE SEMICONDUCTOR DEVICE PROBLEM

摘要

The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by the finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The optimal L~2-norm error estimates are derived.