Effect of Electron and Ultraviolet Radiations and Temperature on n-Si Conductivity

摘要

In this paper the influence of space environment factors on the properties of silicon single crystalswas studied. Theninvestigations were carried out using the space environment simulator at Yerevan Physics Institute. In the presentnstudy silicon conductivity (the most important parameter for space application) measurements were carried outndirectly under the electron radiation (in situ measurements). It was found that the specific conductivity of siliconnsamples,measured during and after radiation, has different values; the first ismuch higher. The postradiation agingneffect depending on storage time is also studied. The dynamics of radiation defect formation, decay, and siliconncrystals recovery processes are examined.