B₂O₃ additives on sintering and microwave dielectric behaviors of Mg₄Nb₂O₉ ceramics synthesized through the aqueous sol–gel Process

摘要

The relationships between the sintering temperatures and the microwave dielectric properties of (1−x)Mg₄Nb₂O₉-xB₂O₃ (x = 0.5–10 wt. %) compounds were investigated by the sol–gel method in order to reduce the sintering temperature in this study. A suitable amount of B₂O₃ doping was effective in allowing low sintering temperatures without a little detrimental effect on these dielectric properties of the Mg₄Nb₂O₉ compounds. The variations in the dielectric constant (ε _r ) and the quality factor (Q·f) of the Mg₄Nb₂O₉ compounds depended on the amount of B₂O₃ doping and the sintering temperature. As a result, a ε _r value of ~12.8 and a Q·f value of ~142,570 GHz were obtained when the Mg₄Nb₂O₉ compound with x = 3% was sintered at 1,200 °C for 4 h. The temperature coefficient of resonant frequency (τ _f ) of the 3%-B₂O₃ doping Mg₄Nb₂O₉ compound slightly changed from −33 to −48 ppm/°C with an increased sintering temperature.