Plasma damage-free SiO_2 deposition for low-temperature poly-Si AMLCDs

摘要

High-quality SiO_2 films have bee fabricated at a substrate temperature of 300 deg. C by utilizing a novel deposition method refered to as radical-shower CVD(RS-CVD), in which the sub- strates and material gases are completely separated from the plasma. On this account, SiO_2 deposition is achievable without plasma damage and excessive decomposition of the material gases. The elec- trical characteristics of RS-CVD SiO_2 films are comparable to those of thermal SiO_2. Furthermore, the compact parallel-plate structure of RS-CVD is suitable for large-area deposition.